发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF
- 专利标题（中）： 半导体结构及其工艺
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申请号： US13276306申请日： 2011-10-18
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公开(公告)号： US20130093062A1公开(公告)日： 2013-04-18
- 发明人: Ying-Chih Lin , Hsuan-Hsu Chen , Jiunn-Hsiung Liao , Lung-En Kuo
- 申请人： Ying-Chih Lin , Hsuan-Hsu Chen , Jiunn-Hsiung Liao , Lung-En Kuo
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/302
摘要：
A semiconductor structure includes a substrate, a recess and a material. The recess is located in the substrate, wherein the recess has an upper part and a lower part. The minimum width of the upper part is larger than the maximum width of the lower part. The material is located in the recess.
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