发明申请
US20130094108A1 MAGNETIC SENSOR HAVING CoFeBTa IN PINNED AND FREE LAYER STRUCTURES
有权
具有拼接和自由层结构的CoFeBTa的磁传感器
- 专利标题: MAGNETIC SENSOR HAVING CoFeBTa IN PINNED AND FREE LAYER STRUCTURES
- 专利标题(中): 具有拼接和自由层结构的CoFeBTa的磁传感器
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申请号: US13275208申请日: 2011-10-17
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公开(公告)号: US20130094108A1公开(公告)日: 2013-04-18
- 发明人: Zheng Gao , Yingfan Xu , Hua Ai Zeng
- 申请人: Zheng Gao , Yingfan Xu , Hua Ai Zeng
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/33 ; G11B5/60
摘要:
A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.
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