Invention Application
US20130098873A1 OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION
审中-公开
用于工厂加工区域中等离子体生成的OVERHEAD电子束源
- Patent Title: OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION
- Patent Title (中): 用于工厂加工区域中等离子体生成的OVERHEAD电子束源
-
Application No.: US13595655Application Date: 2012-08-27
-
Publication No.: US20130098873A1Publication Date: 2013-04-25
- Inventor: Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
- Applicant: Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; C23F1/08
Abstract:
A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.
Information query
IPC分类:
