发明申请
US20130098873A1 OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION
审中-公开
用于工厂加工区域中等离子体生成的OVERHEAD电子束源
- 专利标题： OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION
- 专利标题（中）： 用于工厂加工区域中等离子体生成的OVERHEAD电子束源
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申请号： US13595655申请日： 2012-08-27
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公开(公告)号： US20130098873A1公开(公告)日： 2013-04-25
- 发明人: Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
- 申请人： Kartik Ramaswamy , Kallol Bera , Kenneth S. Collins , Shahid Rauf
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; C23F1/08
摘要：
A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.
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