Invention Application
- Patent Title: ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION
- Patent Title (中): 电子束等离子体源用于均匀等离子体生成
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Application No.: US13595292Application Date: 2012-08-27
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Publication No.: US20130098882A1Publication Date: 2013-04-25
- Inventor: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
- Applicant: Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: B23K15/00
- IPC: B23K15/00
Abstract:
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
Public/Granted literature
- US08951384B2 Electron beam plasma source with segmented beam dump for uniform plasma generation Public/Granted day:2015-02-10
Information query
