- 专利标题: Dopant for a Hole Conductor Layer for Organic Semiconductor Components, and Use Thereof
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申请号: US13638596申请日: 2011-03-31
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公开(公告)号: US20130099209A1公开(公告)日: 2013-04-25
- 发明人: David Hartmann , Sabine Szyszkowski , Andreas Kanitz , Anna Maltenberger , Wiebke Sarfert , Guenter Schmid , Jan Hauke Wemken
- 申请人: David Hartmann , Sabine Szyszkowski , Andreas Kanitz , Anna Maltenberger , Wiebke Sarfert , Guenter Schmid , Jan Hauke Wemken
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 优先权: DE102010013495.3 20100331
- 国际申请: PCT/EP2011/001645 WO 20110331
- 主分类号: H01L51/50
- IPC分类号: H01L51/50 ; H01L51/00
摘要:
The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m2), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.