发明申请
US20130104601A1 Apparatus And Method For Crystallization Of Silicon 有权
硅结晶的装置和方法

Apparatus And Method For Crystallization Of Silicon
摘要:
An apparatus for crystallization of silicon includes a crucible for containing silicon, a heating and heat dissipating arrangement provided for melting the silicon contained in the crucible and for subsequently solidifying the molten silicon, and an electromagnetic stirring device provided for stirring the molten silicon in the crucible during the solidification of the molten silicon. A control arrangement is provided for controlling the heating and heat dissipating arrangement to solidify the molten silicon at a specified solidification rate and for controlling the electromagnetic stirring device to stir the molten silicon in response to the specified solidification rate of the molten silicon such that the ratio of a speed of the molten silicon and the specified solidification rate is above a first threshold value.
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