发明申请
US20130105824A1 Method and System for Generating a Photo-Response from MoS2 Schottky Junctions
有权
用于从MoS2肖特基接头产生光响应的方法和系统
- 专利标题： Method and System for Generating a Photo-Response from MoS2 Schottky Junctions
- 专利标题（中）： 用于从MoS2肖特基接头产生光响应的方法和系统
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申请号： US13661979申请日： 2012-10-26
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公开(公告)号： US20130105824A1公开(公告)日： 2013-05-02
- 发明人: Makarand Paranjape , Paola Barbara , Amy Liu , Marcio Fontana
- 申请人： Makarand Paranjape , Paola Barbara , Amy Liu , Marcio Fontana
- 主分类号： H01L33/02
- IPC分类号： H01L33/02 ; H01L31/032
摘要：
Devices incorporating a single to a few-layer MoS2 channels in combination with optimized substrate, dielectric, contact and electrode materials and configurations thereof, exhibit light emission, photoelectric effect, and superconductivity, respectively.