发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13486994申请日： 2012-06-01
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公开(公告)号： US20130105919A1公开(公告)日： 2013-05-02
- 发明人: LI JIANG , Mingqi Li , Pulei Zhu
- 申请人： LI JIANG , Mingqi Li , Pulei Zhu
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 优先权： CNCN201110146824.6 20110602
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L29/40
摘要：
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.
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