Invention Application
- Patent Title: Magnetoresistance Device and Memory Device Including the Magnetoresistance Device
- Patent Title (中): 包括磁阻装置的磁电阻装置和存储装置
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Application No.: US13660500Application Date: 2012-10-25
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Publication No.: US20130108889A1Publication Date: 2013-05-02
- Inventor: Seidikkurippu Nellainayagam PIRAMANAYAGAM , Rachid SBIAA , Taiebeh TAHMASEBI
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Current Assignee: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Current Assignee Address: SG Singapore
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
According to embodiments of the present invention, a magnetoresistance device is provided. The magnetoresistance device includes a hard magnetic layer and a soft magnetic layer arranged one over the other, wherein the soft magnetic layer includes a stack structure, the stack structure including a first layer and a second layer arranged one over the other, wherein the first layer has a first damping factor and the second layer has a second damping factor, the first damping factor is selected to be lower than the second damping factor.
Information query
IPC分类:
