发明申请
- 专利标题： THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD FOR THE SAME
- 专利标题（中）： 薄膜晶体管基板及其制造方法
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申请号： US13701549申请日： 2011-06-06
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公开(公告)号： US20130112970A1公开(公告)日： 2013-05-09
- 发明人: Yoshinobu Miyamoto , Okifumi Nakagawa , Yoshifumi Ohta , Yuuji Mizuno , Yoshimasa Chikama , Tokuo Yoshida , Masahiko Suzuki , Yoshiyuki Harumoto , Tetsuya Yamashita
- 申请人： Yoshinobu Miyamoto , Okifumi Nakagawa , Yoshifumi Ohta , Yuuji Mizuno , Yoshimasa Chikama , Tokuo Yoshida , Masahiko Suzuki , Yoshiyuki Harumoto , Tetsuya Yamashita
- 优先权： JP2010-129976 20100607
- 国际申请： PCT/JP2011/003179 WO 20110606
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66
摘要：
A TFT substrate (30a) including a TFT (5a) having: a gate electrode (14a) provided on a substrate (10a); a gate insulating film (15) provided to cover the gate electrode (14a); a semiconductor layer (16a) made of an oxide semiconductor provided on the gate insulating film (15) with a channel region (C) arranged to lie above the gate electrode (14a): and a source electrode (19aa) and a drain electrode (19b) provided on the semiconductor layer (16a) to be spaced from each other with the channel region (C) therebetween. A recess (R) is provided on the surface of the channel region (C) of the semiconductor layer (16a) to extend in the channel width direction.
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