发明申请
- 专利标题: NAND FLASH WITH NON-TRAPPING SWITCH TRANSISTORS
- 专利标题(中): 具有非捕获开关晶体管的NAND闪存
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申请号: US13294852申请日: 2011-11-11
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公开(公告)号: US20130119455A1公开(公告)日: 2013-05-16
- 发明人: SHIH-HUNG CHEN , Hang-Ting Lue , Yen-Hao Shih
- 申请人: SHIH-HUNG CHEN , Hang-Ting Lue , Yen-Hao Shih
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L29/792
- IPC分类号: H01L29/792 ; H01L21/336
摘要:
A manufacturing method for a memory array includes first forming a multilayer stack of dielectric material on a plurality of semiconductor strips, and then exposing the multilayer stack in switch transistor regions. The multilayer stacks exposed in the switch transistor regions are processed to form gate dielectric structures that are different than the dielectric charge trapping structures. Word lines and select lines are then formed. A 3D array of dielectric charge trapping memory cells includes stacks of NAND strings of memory cells. A plurality of switch transistors are coupled to the NAND strings, the switch transistors including gate dielectric structures wherein the gate dielectric structures are different than the dielectric charge trapping structures.
公开/授权文献
- US09082656B2 NAND flash with non-trapping switch transistors 公开/授权日:2015-07-14