发明申请
US20130119505A1 Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy
有权
肖特基势垒二极管与选择性外延形成的保护环
- 专利标题： Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy
- 专利标题（中）： 肖特基势垒二极管与选择性外延形成的保护环
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申请号： US13294760申请日： 2011-11-11
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公开(公告)号： US20130119505A1公开(公告)日： 2013-05-16
- 发明人: David L. Harame , Qizhi Liu , Robert M. Rassel
- 申请人： David L. Harame , Qizhi Liu , Robert M. Rassel
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/47
- IPC分类号： H01L29/47 ; G06F9/45 ; H01L21/329
摘要：
Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.