发明申请
US20130122641A1 Method of Fabricating Buried Contacts of Solar Cell with Curved Trenches
审中-公开
制造具有弯曲沟槽的太阳能电池埋地触点的方法
- 专利标题: Method of Fabricating Buried Contacts of Solar Cell with Curved Trenches
- 专利标题(中): 制造具有弯曲沟槽的太阳能电池埋地触点的方法
-
申请号: US13352541申请日: 2012-01-18
-
公开(公告)号: US20130122641A1公开(公告)日: 2013-05-16
- 发明人: Fang-Chi Hsieh , Li-Karn Wang
- 申请人: Fang-Chi Hsieh , Li-Karn Wang
- 申请人地址: TW Hsinchu CN Xuzhou
- 专利权人: NATIONAL TSING HUA UNIVERSITY,JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO.,LTD
- 当前专利权人: NATIONAL TSING HUA UNIVERSITY,JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO.,LTD
- 当前专利权人地址: TW Hsinchu CN Xuzhou
- 优先权: TW100141107 20111110
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
A solar cell having buried contacts is provided. Curved trenches are formed on a surface of a Si substrate to form the buried contacts. The curved trenches have deep depths with wafer break prevented. The buried contacts have good efficiency on collecting electrons obtained from conversion by the longer wavelength light. The present invention is fit for mass production with a high yield, a simple fabrication procedure, a low cost and a good performance.
信息查询
IPC分类: