发明申请
- 专利标题: MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE
- 专利标题(中): 非易失性存储器件的制造方法
-
申请号: US13812227申请日: 2011-07-26
-
公开(公告)号: US20130122651A1公开(公告)日: 2013-05-16
- 发明人: Satoru Fujii , Takumi Mikawa , Haruyuki Sorada
- 申请人: Satoru Fujii , Takumi Mikawa , Haruyuki Sorada
- 申请人地址: JP Osaka
- 专利权人: PANASONIC CORPORATION
- 当前专利权人: PANASONIC CORPORATION
- 当前专利权人地址: JP Osaka
- 优先权: JP2010-168413 20100727
- 国际申请: PCT/JP2011/004207 WO 20110726
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
Each of the step of forming a first variable resistance layer (18a) and the step of forming a second variable resistance layer (18b) includes performing a cycle once or plural times, the cycle consisting of a first step of introducing a source gas composed of molecules containing atoms of a transition metal; a second step of removing the source gas after the first step; a third step of introducing a reactive gas to form a transition metal oxide after the second step; and a fourth step of removing the reactive gas after the third step. The step of forming the first variable resistance layer (18a) is performed in a state in which the substrate is kept at a temperature at which a self-decomposition reaction of the source gas does not occur. One or plural of conditions used for forming the second variable resistance layer (18b) is/are made different from the one or plural conditions used for forming the first variable resistance layer (18a), the conditions being the temperature of the substrate, an amount of the introduced source gas and an amount of the introduced reactive gas.
公开/授权文献
- US09012294B2 Manufacturing method of non-volatile memory device 公开/授权日:2015-04-21
信息查询
IPC分类: