发明申请
US20130127024A1 INTEGRATED CIRCUIT CHIPS WITH FINE-LINE METAL AND OVER-PASSIVATION METAL 有权
具有精细金属和超钝化金属的集成电路板

  • 专利标题: INTEGRATED CIRCUIT CHIPS WITH FINE-LINE METAL AND OVER-PASSIVATION METAL
  • 专利标题(中): 具有精细金属和超钝化金属的集成电路板
  • 申请号: US13735987
    申请日: 2013-01-07
  • 公开(公告)号: US20130127024A1
    公开(公告)日: 2013-05-23
  • 发明人: Mou-Shiung LinJin-Yuan LeeChien-Kang Chou
  • 申请人: Megica Corporation
  • 申请人地址: TW Longtan
  • 专利权人: Megica Corporation
  • 当前专利权人: Megica Corporation
  • 当前专利权人地址: TW Longtan
  • 优先权: TW095136115 20060929
  • 主分类号: H01L23/552
  • IPC分类号: H01L23/552
INTEGRATED CIRCUIT CHIPS WITH FINE-LINE METAL AND OVER-PASSIVATION METAL
摘要:
An integrated circuit chip includes a silicon substrate, a first circuit in or over said silicon substrate, a second circuit device in or over said silicon substrate, a dielectric structure over said silicon substrate, a first interconnecting structure in said dielectric structure, a first pad connected to said first node of said voltage regulator through said first interconnecting structure, a second interconnecting structure in said dielectric structure, a second pad connected to said first node of said internal circuit through said second interconnecting structure, a passivation layer over said dielectric structure, wherein multiple opening in said passivation layer exposes said first and second pads, and a third interconnecting structure over said passivation layer and over said first and second pads.
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