发明申请
US20130127024A1 INTEGRATED CIRCUIT CHIPS WITH FINE-LINE METAL AND OVER-PASSIVATION METAL
有权
具有精细金属和超钝化金属的集成电路板
- 专利标题: INTEGRATED CIRCUIT CHIPS WITH FINE-LINE METAL AND OVER-PASSIVATION METAL
- 专利标题(中): 具有精细金属和超钝化金属的集成电路板
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申请号: US13735987申请日: 2013-01-07
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公开(公告)号: US20130127024A1公开(公告)日: 2013-05-23
- 发明人: Mou-Shiung Lin , Jin-Yuan Lee , Chien-Kang Chou
- 申请人: Megica Corporation
- 申请人地址: TW Longtan
- 专利权人: Megica Corporation
- 当前专利权人: Megica Corporation
- 当前专利权人地址: TW Longtan
- 优先权: TW095136115 20060929
- 主分类号: H01L23/552
- IPC分类号: H01L23/552
摘要:
An integrated circuit chip includes a silicon substrate, a first circuit in or over said silicon substrate, a second circuit device in or over said silicon substrate, a dielectric structure over said silicon substrate, a first interconnecting structure in said dielectric structure, a first pad connected to said first node of said voltage regulator through said first interconnecting structure, a second interconnecting structure in said dielectric structure, a second pad connected to said first node of said internal circuit through said second interconnecting structure, a passivation layer over said dielectric structure, wherein multiple opening in said passivation layer exposes said first and second pads, and a third interconnecting structure over said passivation layer and over said first and second pads.
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