发明申请
- 专利标题: MECHANISMS OF FORMING DAMASCENE INTERCONNECT STRUCTURES
- 专利标题(中): 形成大气互连结构的机理
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申请号: US13434691申请日: 2012-03-29
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公开(公告)号: US20130127055A1公开(公告)日: 2013-05-23
- 发明人: Chien-An CHEN , Wen-Jiun LIU , Chun-Chieh LIN , Hung-Wen SU , Ming-Hsing TSAI , Syun-Ming JANG
- 申请人: Chien-An CHEN , Wen-Jiun LIU , Chun-Chieh LIN , Hung-Wen SU , Ming-Hsing TSAI , Syun-Ming JANG
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/768
摘要:
The mechanisms of forming an interconnect structures described above involves using a reflowed conductive layer. The reflowed conductive layer is thicker in smaller openings than in wider openings. The mechanisms may further involve forming a metal cap layer over the reflow conductive layer, in some embodiments. The interconnect structures formed by the mechanisms described have better electrical and reliability performance.
公开/授权文献
- US09269612B2 Mechanisms of forming damascene interconnect structures 公开/授权日:2016-02-23
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