发明申请
US20130129083A1 TAMPER-RESISTANT MEMORY INTEGRATED CIRCUIT AND ENCRYPTION CIRCUIT USING SAME
有权
使用相同的阻抗记忆体集成电路和加密电路
- 专利标题: TAMPER-RESISTANT MEMORY INTEGRATED CIRCUIT AND ENCRYPTION CIRCUIT USING SAME
- 专利标题(中): 使用相同的阻抗记忆体集成电路和加密电路
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申请号: US13812628申请日: 2010-07-28
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公开(公告)号: US20130129083A1公开(公告)日: 2013-05-23
- 发明人: Takeshi Fujino
- 申请人: Takeshi Fujino
- 申请人地址: JP Kyoto-shi, Kyoto
- 专利权人: THE RITSUMEIKAN TRUST
- 当前专利权人: THE RITSUMEIKAN TRUST
- 当前专利权人地址: JP Kyoto-shi, Kyoto
- 国际申请: PCT/JP2010/062689 WO 20100728
- 主分类号: G11C8/08
- IPC分类号: G11C8/08 ; H04L9/00 ; G11C7/12 ; H04L9/28 ; G11C8/00 ; G11C7/00 ; G06F7/58
摘要:
The present invention provides an integrated memory circuit applicable to an S-box of a cryptographic circuit, the integrated memory circuit having a row decoder, a column decoder, and a sense amplifier composed of a domino-RSL circuit, wherein data reading and data writing from/to memory cells of a memory cell array are performed via two complementary bit lines, and the transition probability of a signal line is equalized by input of random-number data supplied from a random-number generating circuit using an arbiter circuit.
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