Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.