发明申请
- 专利标题: THERMALLY CONFINED ELECTRODE FOR PROGRAMMABLE RESISTANCE MEMORY
- 专利标题(中): 用于可编程电阻存储器的热电极
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申请号: US13310583申请日: 2011-12-02
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公开(公告)号: US20130140513A1公开(公告)日: 2013-06-06
- 发明人: Sheng-Chih Lai , Hsiang-Lan Lung , Matthew J. Breitwisch
- 申请人: Sheng-Chih Lai , Hsiang-Lan Lung , Matthew J. Breitwisch
- 主分类号: H01L47/00
- IPC分类号: H01L47/00 ; H01L21/02
摘要:
A memory device includes a plurality of side-wall electrodes formed on a first side-wall of a trench within an insulating layer over a first plurality of contacts in an array of contacts in a substrate. The plurality of side-wall electrodes contact respective top surfaces of the first plurality of contacts. The side-wall electrodes respectively comprise a layer of tantalum nitride, having a composition TaxNy, where y is greater than x, and a layer of electrode material having a lower electrical resistivity and a lower thermal resistivity than the layer of tantalum nitride. Top surfaces of the plurality of side-wall electrodes contact memory material. A second plurality of side-wall electrodes may be formed on a second side-wall of the trench over a second plurality of contacts in the array of contacts.