发明申请
- 专利标题： SILICON SUBSTRATE, EPITAXIAL STRUCTURE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SILICON SUBSTRATE
- 专利标题（中）： 硅衬底，包括其的外延结构以及制造硅衬底的方法
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申请号： US13614315申请日： 2012-09-13
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公开(公告)号： US20130140567A1公开(公告)日： 2013-06-06
- 发明人: Jun-youn KIM , Jae-Kyun KIM , Su-hee CHAE , Hyun-gi HONG
- 申请人： Jun-youn KIM , Jae-Kyun KIM , Su-hee CHAE , Hyun-gi HONG
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR1020110129159 20111205
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/20 ; H01L21/425 ; H01L29/06
摘要：
Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.