发明申请
US20130140657A1 MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE
审中-公开
包括具有三维结构的自由磁层的磁记忆装置
- 专利标题： MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE
- 专利标题（中）： 包括具有三维结构的自由磁层的磁记忆装置
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申请号： US13572105申请日： 2012-08-10
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公开(公告)号： US20130140657A1公开(公告)日： 2013-06-06
- 发明人: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
- 申请人： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2011-0129158 20111205
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
Magnetic memory devices including a free magnetic layer having a three-dimensional structure, include a switching device and a magnetic tunnel junction (MTJ) cell connected thereto. The MTJ cell includes a lower magnetic layer, a tunnel barrier layer, and a free magnetic layer, which are sequentially stacked. A portion of the free magnetic layer protrudes in a direction away from an upper surface of the tunnel barrier layer.
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