发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13309559申请日： 2011-12-02
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公开(公告)号： US20130140708A1公开(公告)日： 2013-06-06
- 发明人: Yung-Chang Lin , Chien-Li Kuo , Ming-Tse Lin , Sun-Chieh Chien
- 申请人： Yung-Chang Lin , Chien-Li Kuo , Ming-Tse Lin , Sun-Chieh Chien
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/76
摘要：
A method of fabricating a semiconductor device includes the following steps. A semiconductor substrate having a first side and a second side facing to the first side is provided. At least an opening is disposed in the semiconductor substrate of a protection region defined in the first side. A first material layer is formed on the first side and the second side, and the first material layer partially fills the opening. Subsequently, a part of the first material layer on the first side and outside the protection region is removed. A second material layer is formed on the first side and the second side, and the second material layer fills the opening. Then, a part of the second material layer on the first side and outside the protection region is removed. Finally, the remaining first material layer and the remaining second material layer on the first side are planarized.
公开/授权文献
- US08692359B2 Through silicon via structure having protection ring 公开/授权日：2014-04-08
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