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发明申请
US20130148405A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PERFORMING BURN-IN TEST ON THE SAME 有权
半导体存储器件及其相同的测试方法

  • 专利标题： SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PERFORMING BURN-IN TEST ON THE SAME
  • 专利标题（中）： 半导体存储器件及其相同的测试方法
  • 申请号： US13653782
    申请日： 2012-10-17
  • 公开(公告)号： US20130148405A1
    公开(公告)日： 2013-06-13
  • 发明人: Sang-beom KANG , Joon-hyung LEE
  • 申请人： Sang-beom KANG , Joon-hyung LEE
  • 优先权： KR10-2011-0131113 20111208
  • 主分类号： G11C29/12
  • IPC分类号： G11C29/12 ;  G11C11/02 ;  G11C11/21
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PERFORMING BURN-IN TEST ON THE SAME
摘要：
A semiconductor memory device includes a cell array having a plurality of memory cells, each memory cell including a resistive element and a cell transistor between a bit line and a source line, and a source line voltage supply unit configured to supply, in a normal mode, a reference source line voltage to the source line, and in a test mode, a first source line voltage to the source line when data in a first state is recorded and a second source line voltage to the source line when data in a second state is recorded, the first source line voltage being lower than the reference source line voltage, and the second source line voltage being higher than the reference source line voltage.
摘要（中）：

半导体存储器件包括具有多个存储单元的单元阵列，每个存储单元包括位线和源极线之间的电阻元件和单元晶体管，以及源极线电压供给单元，被配置为以正常模式 ，到源极线的参考源极线电压，并且在测试模式中，当记录处于第一状态的数据时，到源极线的第一源极线电压，以及当处于第二状态的数据时到源极线的第二源极线电压 ，第一源极线电压低于基准源极线电压，第二源极线电压高于基准源极线电压。

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