发明申请
- 专利标题: BIT-LEVEL MEMORY CONTROLLER AND A METHOD THEREOF
- 专利标题(中): 双层存储器控制器及其方法
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申请号: US13313714申请日: 2011-12-07
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公开(公告)号: US20130151752A1公开(公告)日: 2013-06-13
- 发明人: Po-Wen Hsiao , Hung-Wen Hsieh
- 申请人: Po-Wen Hsiao , Hung-Wen Hsieh
- 申请人地址: TW Hsinchu City
- 专利权人: SKYMEDI CORPORATION
- 当前专利权人: SKYMEDI CORPORATION
- 当前专利权人地址: TW Hsinchu City
- 主分类号: G06F12/02
- IPC分类号: G06F12/02
摘要:
The present invention is directed to a bit-level memory controller and method adaptable to managing defect bits of a non-volatile memory. A bad column management (BCM) unit retrieves a bit-level mapping table, in which defect bits are respectively marked, based on which the BCM unit constructs a bit-level script (BLS) that contains a plurality of entries denoting defect-bit groups respectively. An internal buffer is configured to store data managed by the BCM unit according to the BLS.
公开/授权文献
- US08892968B2 Bit-level memory controller and a method thereof 公开/授权日:2014-11-18
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