发明申请
US20130153533A1 METHOD FOR TUNING WAVELENGTH OF OPTICAL DEVICE USING REFRACTIVE INDEX QUASI-PHASE CHANGE AND ETCHING
审中-公开
使用折射率指数进行相位变化和蚀刻来调谐光学器件的波长的方法
- 专利标题： METHOD FOR TUNING WAVELENGTH OF OPTICAL DEVICE USING REFRACTIVE INDEX QUASI-PHASE CHANGE AND ETCHING
- 专利标题（中）： 使用折射率指数进行相位变化和蚀刻来调谐光学器件的波长的方法
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申请号： US13612467申请日： 2012-09-12
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公开(公告)号： US20130153533A1公开(公告)日： 2013-06-20
- 发明人: Sahnggi PARK , Gyungock KIM
- 申请人： Sahnggi PARK , Gyungock KIM
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2011-0136709 20111216
- 主分类号： B05D5/06
- IPC分类号： B05D5/06 ; B05D3/10
摘要：
Methods for tuning a wavelength of an optical device are provided. According to the method, a core pattern may be formed on a substrate, a dielectric layer may be formed to cover the core pattern, and the dielectric layer may be thermally treated to increase a refractive index of the dielectric layer. The dielectric layer may include a silicon oxynitride layer.
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