Invention Application
US20130153906A1 THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED STORAGE CAPACITANCE AND MANUFACTURING METHOD THEREOF
审中-公开
具有改进存储容量的薄膜晶体管阵列板及其制造方法
- Patent Title: THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED STORAGE CAPACITANCE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 具有改进存储容量的薄膜晶体管阵列板及其制造方法
-
Application No.: US13668082Application Date: 2012-11-02
-
Publication No.: US20130153906A1Publication Date: 2013-06-20
- Inventor: Hye-Young RYU , Jang-Soo KIM , Sang-Gab KIM , Hong-Kee CHIN , Min-Seok OH , Hee-Hwan CHOE , Shi-Yul KIM
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR YONGIN-CITY
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR YONGIN-CITY
- Priority: KR10-2005-0015914 20050225; KR10-2005-0034964 20050427
- Main IPC: G02F1/1362
- IPC: G02F1/1362

Abstract:
A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
Information query
IPC分类: