Invention Application
US20130153906A1 THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED STORAGE CAPACITANCE AND MANUFACTURING METHOD THEREOF 审中-公开
具有改进存储容量的薄膜晶体管阵列板及其制造方法

THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED STORAGE CAPACITANCE AND MANUFACTURING METHOD THEREOF
Abstract:
A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
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