发明申请
US20130154038A1 High Performance MTJ Element for Conventional MRAM and for STT-RAM and a Method for Making the Same
有权
用于传统MRAM和STT-RAM的高性能MTJ元件及其制造方法
- 专利标题： High Performance MTJ Element for Conventional MRAM and for STT-RAM and a Method for Making the Same
- 专利标题（中）： 用于传统MRAM和STT-RAM的高性能MTJ元件及其制造方法
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申请号： US13764357申请日： 2013-02-11
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公开(公告)号： US20130154038A1公开(公告)日： 2013-06-20
- 发明人: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- 申请人： MagiC Technologies, Inc.
- 申请人地址： US CA Milpitas
- 专利权人： MAGIC TECHNOLOGIES, INC.
- 当前专利权人： MAGIC TECHNOLOGIES, INC.
- 当前专利权人地址： US CA Milpitas
- 主分类号： H01L43/10
- IPC分类号： H01L43/10
摘要：
A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous Co40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
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