发明申请
US20130163318A1 Self-Referenced MRAM Cell and Method for Writing the Cell Using a Spin Transfer Torque Write Operation
有权
自参考MRAM单元和使用自旋转移写入操作写入单元的方法
- 专利标题: Self-Referenced MRAM Cell and Method for Writing the Cell Using a Spin Transfer Torque Write Operation
- 专利标题(中): 自参考MRAM单元和使用自旋转移写入操作写入单元的方法
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申请号: US13720232申请日: 2012-12-19
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公开(公告)号: US20130163318A1公开(公告)日: 2013-06-27
- 发明人: Ioan Lucian Prejbeanu , Kenneth Mackay
- 申请人: CROCUS TECHNOLOGY SA
- 申请人地址: FR Grenoble Cedex
- 专利权人: CROCUS TECHNOLOGY SA
- 当前专利权人: CROCUS TECHNOLOGY SA
- 当前专利权人地址: FR Grenoble Cedex
- 优先权: EP11290591.4 20111222
- 主分类号: G11C11/16
- IPC分类号: G11C11/16
摘要:
The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.