发明申请
- 专利标题: PHOTODIODE ARRAYS AND METHODS OF FABRICATION
- 专利标题(中): 光电子阵列和制造方法
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申请号: US13343146申请日: 2012-01-04
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公开(公告)号: US20130168796A1公开(公告)日: 2013-07-04
- 发明人: Abdelaziz Ikhlef , Wen Li
- 申请人: Abdelaziz Ikhlef , Wen Li
- 申请人地址: US NY Schenectady
- 专利权人: GENERAL ELECTRIC COMPANY
- 当前专利权人: GENERAL ELECTRIC COMPANY
- 当前专利权人地址: US NY Schenectady
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L31/18
摘要:
Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes.
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