发明申请
- 专利标题: TOP GATE MOLD WITH PARTICLE TRAP
- 专利标题(中): 顶门模具与颗粒捕捉
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申请号: US13340319申请日: 2011-12-29
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公开(公告)号: US20130168899A1公开(公告)日: 2013-07-04
- 发明人: Jerome Teysseyre , Glenn de los Reyes
- 申请人: Jerome Teysseyre , Glenn de los Reyes
- 申请人地址: SG Singapore
- 专利权人: STMICROELECTRONICS PTE LTD.
- 当前专利权人: STMICROELECTRONICS PTE LTD.
- 当前专利权人地址: SG Singapore
- 主分类号: B29C45/24
- IPC分类号: B29C45/24 ; B29C45/26
摘要:
A top-gate molding system for encapsulating semiconductor devices includes a plurality of mold cavities formed between a middle plate and a bottom plate, and a runner system formed between an upper plate and the middle plate. The runner system includes a runner with a plurality of reservoirs along its length, with a gate extending from each of the reservoirs to one of the cavities. A particle trap is positioned on the bottom of the runner between a sprue and a first one of the reservoirs, to capture contaminating particles in a flow of molding compound before the particles enter any of the reservoirs. The particle trap can be, for example, a notch or a channel extending transversely across the bottom of the runner, or a dummy reservoir upstream of the first of the plurality of reservoirs.
公开/授权文献
- US09254596B2 Top gate mold with particle trap 公开/授权日:2016-02-09
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