Invention Application
- Patent Title: THROUGH-SILICON VIA STRUCTURE FORMATION PROCESS
- Patent Title (中): 通过结构形成过程的硅
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Application No.: US13775983Application Date: 2013-02-25
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Publication No.: US20130171772A1Publication Date: 2013-07-04
- Inventor: Yung-Chi LIN , Weng-Jin WU , Shau-Lin SHUE
- Applicant: Yung-Chi LIN , Weng-Jin WU , Shau-Lin SHUE
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
In a process, an opening is formed to extend from a front surface of a semiconductor substrate through a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A block layer is formed on only a portion of the metal seed layer. A metal layer is formed on the block layer and the metal seed layer to fill the opening.
Public/Granted literature
- US08791011B2 Through-silicon via structure formation process Public/Granted day:2014-07-29
Information query
IPC分类:
