发明申请
US20130174103A1 MANDREL MODIFICATION FOR ACHIEVING SINGLE FIN FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE
有权
用于实现单FIN FIN效果场效应晶体管（FINFET）器件的MANDREL修改
- 专利标题： MANDREL MODIFICATION FOR ACHIEVING SINGLE FIN FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE
- 专利标题（中）： 用于实现单FIN FIN效果场效应晶体管（FINFET）器件的MANDREL修改
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申请号： US13339646申请日： 2011-12-29
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公开(公告)号： US20130174103A1公开(公告)日： 2013-07-04
- 发明人: Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
- 申请人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.