发明申请
- 专利标题： PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 像素结构及其制造方法
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申请号： US13437003申请日： 2012-04-02
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公开(公告)号： US20130175531A1公开(公告)日： 2013-07-11
- 发明人: Kuo-Wei Wu , Chin-Tzu Kao
- 申请人： Kuo-Wei Wu , Chin-Tzu Kao
- 优先权： TW101101065 20120111
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A pixel structure includes a substrate, a gate line, a data line, a semiconductor pattern, a non-metal source electrode pattern, a non-metal drain electrode pattern, and a pixel electrode. The gate line and the data line are disposed on the substrate. The semiconductor pattern is disposed on the gate line, and the semiconductor pattern overlaps two corresponding edges of the gate line along a vertical projective direction. The non-metal source electrode pattern and the non-metal drain electrode pattern are disposed on the semiconductor pattern. The non-metal source electrode pattern and the non-metal drain electrode pattern are respectively disposed on two corresponding edges of the gate line. The non-metal source electrode pattern is partially disposed between the data line and the gate line. The pixel electrode is electrically connected to the non-metal drain electrode pattern.
公开/授权文献
- US08823000B2 Pixel structure and manufacturing method thereof 公开/授权日：2014-09-02
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