Invention Application
- Patent Title: FIELD EFFECT TRANSISTOR DEVICE
- Patent Title (中): 场效应晶体管器件
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Application No.: US13783526Application Date: 2013-03-04
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Publication No.: US20130175547A1Publication Date: 2013-07-11
- Inventor: Kevin K. Chan , Abhishek Dube , Eric C. Harley , Judson R. Holt , Viorel C. Ontalus , Kathryn T. Schonenberg , Matthew W. Stoker , Keith H. Tabakman , Linda R. Black
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: GLOBALFOUNDRIES, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US KY Grand Cayman US NY Armonk
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.
Public/Granted literature
- US08618617B2 Field effect transistor device Public/Granted day:2013-12-31
Information query
IPC分类:
