发明申请
- 专利标题： DEVICE AND METHODS FOR SMALL TRENCH PATTERNING
- 专利标题（中）： 小型图案的装置和方法
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申请号： US13343818申请日： 2012-01-05
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公开(公告)号： US20130175637A1公开(公告)日： 2013-07-11
- 发明人: Ya Hui Chang
- 申请人： Ya Hui Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/8234
摘要：
A semiconductor device and methods for small trench patterning are disclosed. The device includes a plurality of gate structures and sidewall spacers, and an etch buffer layer disposed over the sidewall spacers. The etch buffer layer includes an overhang component disposed on the upper portion of the sidewall spacers with an edge that extends laterally. The width between the edges of adjacent overhang components is narrower than the width between adjacent sidewall spacers.
公开/授权文献
- US08564068B2 Device and methods for small trench patterning 公开/授权日：2013-10-22
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