发明申请
- 专利标题： Reference Averaging for MRAM Sense Amplifiers
- 专利标题（中）： MRAM检测放大器的参考平均
-
申请号： US13345116申请日： 2012-01-06
-
公开(公告)号： US20130176773A1公开(公告)日： 2013-07-11
- 发明人: Perng-Fei Yuh , Pokang Wang , Lejan Pu
- 申请人： Perng-Fei Yuh , Pokang Wang , Lejan Pu
- 申请人地址： US CA Milpitas
- 专利权人： HEADWAY TECHNOLOGIES, INC.
- 当前专利权人： HEADWAY TECHNOLOGIES, INC.
- 当前专利权人地址： US CA Milpitas
- 主分类号： G11C11/02
- IPC分类号： G11C11/02 ; G11C7/06
摘要：
A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.
公开/授权文献
- US08693273B2 Reference averaging for MRAM sense amplifiers 公开/授权日：2014-04-08
信息查询
