发明申请
US20130189533A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN
审中-公开
用于包含聚合物结构树脂的层析膜的膜下膜成膜组合物
- 专利标题: RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN
- 专利标题(中): 用于包含聚合物结构树脂的层析膜的膜下膜成膜组合物
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申请号: US13825925申请日: 2011-10-07
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公开(公告)号: US20130189533A1公开(公告)日: 2013-07-25
- 发明人: Hiroaki Okuyama , Yasunobu Someya , Masakazu Kato , Tetsuya Shinjo , Keisuke Hashimoto
- 申请人: Hiroaki Okuyama , Yasunobu Someya , Masakazu Kato , Tetsuya Shinjo , Keisuke Hashimoto
- 申请人地址: JP Tokyo
- 专利权人: NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人: NISSAN CHEMICAL INDUSTRIES, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-231217 20101014
- 国际申请: PCT/JP2011/073233 WO 20111007
- 主分类号: G03F7/09
- IPC分类号: G03F7/09 ; H01L21/308
摘要:
There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): O—Ar1 Formula (1) (in Formula (1), Ar1 is a C6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2): O—Ar2—O—Ar3-T-Ar4 Formula (2) (in Formula (2), Ar2, Ar3, and Ar4 are individually a C6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar1 and Ar2 containing arylene group may be organic groups containing a fluorene structure.