- 专利标题： High performance system-on-chip inductor using post passivation process
-
申请号： US11668482申请日： 2007-01-30
-
公开(公告)号： US20130193553A9公开(公告)日： 2013-08-01
- 发明人: Mou-Shiung Lin
- 申请人： Mou-Shiung Lin
- 申请人地址： TW Hsinchu
- 专利权人： MEGICA CORPORATION
- 当前专利权人： MEGICA CORPORATION
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A system and method for forming post passivation inductors, and related structures, is described. High quality electrical components, such as inductors and transformers, are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
公开/授权文献
信息查询
IPC分类:
