发明申请
- 专利标题： Meander Line Resistor Structure
- 专利标题（中）： 曲折线电阻器结构
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申请号： US13365303申请日： 2012-02-03
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公开(公告)号： US20130200448A1公开(公告)日： 2013-08-08
- 发明人: Hsiao-Tsung Yen , Yu-Ling Lin
- 申请人： Hsiao-Tsung Yen , Yu-Ling Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8234 ; H01L29/8605
摘要：
A meander line resistor structure comprises a first resistor formed on a first active region, wherein the first resistor is formed by a plurality of first vias connected in series, a second resistor formed on a second active region, wherein the second resistor is formed by a plurality of second vias connected in series and a third resistor formed on the second active region, wherein the third resistor is formed by a plurality of third vias connected in series. The meander line resistor further comprises a first connector coupled between the first resistor and the second resistor.
公开/授权文献
- US08890222B2 Meander line resistor structure 公开/授权日：2014-11-18
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