发明申请
US20130207275A1 Methods of Forming Device Level Conductive Contacts to Improve Device Performance and Semiconductor Devices Comprising Such Contacts
审中-公开
形成器件级导电触点以提高器件性能的方法和包括这种触点的半导体器件
- 专利标题： Methods of Forming Device Level Conductive Contacts to Improve Device Performance and Semiconductor Devices Comprising Such Contacts
- 专利标题（中）： 形成器件级导电触点以提高器件性能的方法和包括这种触点的半导体器件
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申请号： US13397199申请日： 2012-02-15
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公开(公告)号： US20130207275A1公开(公告)日： 2013-08-15
- 发明人: Ricardo P. Mikalo , Thilo Scheiper , Stefan Flachowsky
- 申请人： Ricardo P. Mikalo , Thilo Scheiper , Stefan Flachowsky
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Disclosed herein are various methods of forming device level conductive contacts to improve device performance and various semiconductor devices with such improved deice level contact configurations. In one example, a device disclosed herein includes a first device level conductive contact positioned in a first layer of insulating material, wherein the first device level conductive contact is conductively coupled to a semiconductor device, a second device level conductive contact positioned above and conductively coupled to the first device level contact, wherein the second device level contact is positioned in a second layer of insulating material, and a first wiring layer for the device that is positioned above and conductively coupled to the second device level conductive contact.
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