发明申请
- 专利标题： DEVICE AND DEVICE MANUFACTURE METHOD
- 专利标题（中）： 器件和器件制造方法
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申请号： US13797521申请日： 2013-03-12
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公开(公告)号： US20130213561A1公开(公告)日： 2013-08-22
- 发明人: Jun UTSUMI , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
- 申请人： Jun UTSUMI , Takayuki Goto , Kensuke Ide , Hideki Takagi , Masahiro Funayama
- 优先权： JP2007-290922 20071108
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.
公开/授权文献
- US08936998B2 Manufcaturing method for room-temperature substrate bonding 公开/授权日：2015-01-20