发明申请
US20130216845A1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL
审中-公开
用于生长III族氮化物晶体的高压容器和使用高压容器和III类硝酸盐晶体生长III族氮化物晶体的方法
- 专利标题： HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL
- 专利标题（中）： 用于生长III族氮化物晶体的高压容器和使用高压容器和III类硝酸盐晶体生长III族氮化物晶体的方法
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申请号： US13847222申请日： 2013-03-19
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公开(公告)号： US20130216845A1公开(公告)日： 2013-08-22
- 发明人: Tadao Hashimoto , Edward Letts , Masanori Ikari
- 申请人： SixPoint Materials, Inc.
- 申请人地址： US CA Buellton
- 专利权人： SixPoint Materials, Inc.
- 当前专利权人： SixPoint Materials, Inc.
- 当前专利权人地址： US CA Buellton
- 主分类号： C30B7/10
- IPC分类号： C30B7/10 ; B32B15/01
摘要：
Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
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