Invention Application
- Patent Title: HIGH EFFICIENCY PATH BASED POWER AMPLIFIER CIRCUITRY
- Patent Title (中): 高效路由功率放大器电路
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Application No.: US13845410Application Date: 2013-03-18
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Publication No.: US20130217341A1Publication Date: 2013-08-22
- Inventor: David E. Jones , Wayne D. Tattershall
- Applicant: RF MICRO DEVICES, INC.
- Applicant Address: US NC Greensboro
- Assignee: RF MICRO DEVICES, INC.
- Current Assignee: RF MICRO DEVICES, INC.
- Current Assignee Address: US NC Greensboro
- Main IPC: H04B1/04
- IPC: H04B1/04
Abstract:
A first transmit path, a second transmit path, and a third transmit path are disclosed. The first transmit path includes a first radio frequency (RF) power amplifier (PA) and alpha switching circuitry, which is coupled to an output from the first RF PA. The second transmit path includes a second RF PA and beta switching circuitry, which is coupled to an output from the second RF PA. The third transmit path includes a third RF PA.
Public/Granted literature
- US09077405B2 High efficiency path based power amplifier circuitry Public/Granted day:2015-07-07
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