发明申请
- 专利标题： THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME
- 专利标题（中）： 薄膜晶体管基板，其制造方法和包括其的显示装置
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申请号： US13871368申请日： 2013-04-26
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公开(公告)号： US20130234124A1公开(公告)日： 2013-09-12
- 发明人: KAP-SOO YOON , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
- 申请人： SAMSUNG DISPLAY CO., LTD.
- 申请人地址： KR Yongin-si
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR Yongin-si
- 优先权： KR10-2010-0015184 20100219
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L51/52
摘要：
Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
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