发明申请
- 专利标题: SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- 专利标题(中): 硅碳化硅基板,半导体器件及制造碳化硅基板的方法
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申请号: US13885467申请日: 2011-11-15
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公开(公告)号: US20130234164A1公开(公告)日: 2013-09-12
- 发明人: Hiroyuki Nagasawa , Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta
- 申请人: Hiroyuki Nagasawa , Takamitsu Kawahara , Kuniaki Yagi , Naoki Hatta
- 申请人地址: JP Tokyo
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-254530 20101115; JP2011-197579 20110909
- 国际申请: PCT/JP2011/076280 WO 20111115
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L29/16
摘要:
There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.