发明申请
US20130236085A1 Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology
有权
用于晶圆表面计量的先进的基于位点的纳米形貌的系统和方法
- 专利标题: Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology
- 专利标题(中): 用于晶圆表面计量的先进的基于位点的纳米形貌的系统和方法
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申请号: US13779947申请日: 2013-02-28
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公开(公告)号: US20130236085A1公开(公告)日: 2013-09-12
- 发明人: Haiguang Chen , Sergey Kamensky , Jaydeep Sinha , Pradeep Vukkadala
- 申请人: KLA-TENCOR CORPORATION
- 专利权人: KLA-TENCOR CORPORATION
- 当前专利权人: KLA-TENCOR CORPORATION
- 主分类号: G06T7/00
- IPC分类号: G06T7/00
摘要:
Systems and methods for providing micro defect inspection capabilities for optical systems are disclosed. Each given wafer image is filtered, treated and normalized prior to performing surface feature detection and quantification. A partitioning scheme is utilized to partition the wafer image into a plurality of measurement sites and metric values are calculated for each of the plurality of measurement sites. Furthermore, transformation steps may also be utilized to extract additional process relevant metric values for analysis purposes.