发明申请
US20130241014A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) PACKAGE INCLUDING A MULTILAYER MAGNETIC SECURITY STRUCTURE
有权
磁阻随机存取存储器（MRAM）封装，包括多层磁性安全结构
- 专利标题： MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) PACKAGE INCLUDING A MULTILAYER MAGNETIC SECURITY STRUCTURE
- 专利标题（中）： 磁阻随机存取存储器（MRAM）封装，包括多层磁性安全结构
-
申请号： US13419109申请日： 2012-03-13
-
公开(公告)号： US20130241014A1公开(公告)日： 2013-09-19
- 发明人: Romney R. Katti , James L. Tucker , Anuj Kohli
- 申请人： Romney R. Katti , James L. Tucker , Anuj Kohli
- 申请人地址： US NJ Morristown
- 专利权人： HONEYWELL INTERNATIONAL INC.
- 当前专利权人： HONEYWELL INTERNATIONAL INC.
- 当前专利权人地址： US NJ Morristown
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/12
摘要：
A magnetoresistive random access memory (MRAM) package may include an MRAM die, a package defining a cavity and an exterior surface, and a magnetic security structure disposed within the cavity or on the exterior surface of the package. The MRAM die may be disposed in the cavity of the package, and the magnetic security structure may include at least three layers including a permanent magnetic layer and a soft magnetic layer.
公开/授权文献
信息查询
IPC分类:
