发明申请
US20130244410A1 METHODS OF FORMING BULK III-NITRIDE MATERIALS ON METAL-NITRIDE GROWTH TEMPLATE LAYERS, AND STRUCTURES FORMED BY SUCH METHODS
有权
金属氮化物模板层上形成块状III-氮化物材料的方法，以及通过这些方法形成的结构
- 专利标题： METHODS OF FORMING BULK III-NITRIDE MATERIALS ON METAL-NITRIDE GROWTH TEMPLATE LAYERS, AND STRUCTURES FORMED BY SUCH METHODS
- 专利标题（中）： 金属氮化物模板层上形成块状III-氮化物材料的方法，以及通过这些方法形成的结构
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申请号： US13988987申请日： 2011-11-23
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公开(公告)号： US20130244410A1公开(公告)日： 2013-09-19
- 发明人: Chantal Arena , Ronald Thomas Bertram , Ed Lindow
- 申请人： Chantal Arena , Ronald Thomas Bertram , Ed Lindow
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 国际申请： PCT/EP11/70771 WO 20111123
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.