In a method for manufacturing a silicon carbide semiconductor device, a conductive layer is formed on a silicon carbide layer. The silicon carbide layer and the conductive layer react with each other thus forming an alloy layer formed of a reaction layer in contact with the silicon carbide layer and a silicide layer on the reaction layer. A carbon component is removed from the silicide layer. A portion of the silicide layer is removed using an acid thus exposing at least a portion of the reaction layer. An electrode layer is formed on an upper side of the exposed reaction layer.